IPP80N08S207AKSA1 INFINEON TECHNOLOGIES
Виробник: INFINEON TECHNOLOGIESCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.1mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 360.83 грн |
| 3+ | 301.26 грн |
| 4+ | 218.97 грн |
| 11+ | 207.21 грн |
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Технічний опис IPP80N08S207AKSA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 75V 80A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PG-TO220-3-1, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V.
Інші пропозиції IPP80N08S207AKSA1
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Ціна без ПДВ |
|---|---|---|---|---|---|
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IPP80N08S207AKSA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 75V 80A Automotive 3-Pin(3+Tab) TO-220AB Tube |
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IPP80N08S207AKSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 75V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO220-3-1 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V |
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IPP80N08S207AKSA1 | Виробник : Infineon Technologies |
MOSFET N-Ch 75V 80A TO220-3 OptiMOS |
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