Технічний опис IPP03N03LBG infineon
Description: MOSFET N-CH 30V 80A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 55A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2V @ 100µA, Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 7624 pF @ 15 V.
Інші пропозиції IPP03N03LBG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IPP03N03LB G | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB |
товар відсутній |
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IPP03N03LB G | Виробник : Infineon Technologies |
Description: MOSFET N-CH 30V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 55A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 7624 pF @ 15 V |
товар відсутній |