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IPG20N06S4L11AATMA1 Infineon Technologies
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Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 2820 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 120.13 грн |
10+ | 96.35 грн |
100+ | 76.68 грн |
500+ | 60.89 грн |
1000+ | 51.66 грн |
2000+ | 49.08 грн |
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Технічний опис IPG20N06S4L11AATMA1 Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 65W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 20A, Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V, Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 28µA, Supplier Device Package: PG-TDSON-8-10, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції IPG20N06S4L11AATMA1 за ціною від 50.75 грн до 131.2 грн
Фото | Назва | Виробник | Інформація |
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IPG20N06S4L11AATMA1 | Виробник : Infineon Technologies |
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на замовлення 2862 шт: термін постачання 21-30 дні (днів) |
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IPG20N06S4L11AATMA1 | Виробник : Infineon Technologies |
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товар відсутній |
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IPG20N06S4L11AATMA1 | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 28µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товар відсутній |