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IPG20N04S412ATMA1 Infineon


Infineon-IPG20N04S4_12-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf60c03c6c05 Виробник: Infineon

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Технічний опис IPG20N04S412ATMA1 Infineon

Description: MOSFET 2N-CH 40V 20A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 41W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 20A, Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V, Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 15µA, Supplier Device Package: PG-TDSON-8-4, Grade: Automotive, Qualification: AEC-Q101.

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IPG20N04S412ATMA1 IPG20N04S412ATMA1 Виробник : Infineon Technologies ipg20n04s4-12_ds_1_0.pdf Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R
товар відсутній
IPG20N04S412ATMA1 IPG20N04S412ATMA1 Виробник : Infineon Technologies Infineon-IPG20N04S4_12-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf60c03c6c05 Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
IPG20N04S412ATMA1 IPG20N04S412ATMA1 Виробник : Infineon Technologies Infineon-IPG20N04S4_12-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf60c03c6c05 Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
IPG20N04S412ATMA1 IPG20N04S412ATMA1 Виробник : Infineon Technologies Infineon-IPG20N04S4_12-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf60c03c6c05 MOSFET MOSFET_(20V 40V)
товар відсутній