IPF129N20NM6ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IPF129N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
Description: IPF129N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V
Power Dissipation (Max): 3.8W (Ta), 234W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 129µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V
на замовлення 988 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 453.01 грн |
10+ | 366.49 грн |
100+ | 296.47 грн |
500+ | 247.31 грн |
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Технічний опис IPF129N20NM6ATMA1 Infineon Technologies
Description: IPF129N20NM6ATMA1, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V, Power Dissipation (Max): 3.8W (Ta), 234W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 129µA, Supplier Device Package: PG-TO263-7-3, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V.
Інші пропозиції IPF129N20NM6ATMA1 за ціною від 220.98 грн до 487.73 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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IPF129N20NM6ATMA1 | Виробник : Infineon Technologies | MOSFETs N |
на замовлення 980 шт: термін постачання 21-30 дні (днів) |
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IPF129N20NM6ATMA1 | Виробник : Infineon Technologies |
Description: IPF129N20NM6ATMA1 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 15V Power Dissipation (Max): 3.8W (Ta), 234W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 129µA Supplier Device Package: PG-TO263-7-3 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 100 V |
товар відсутній |