IPDQ65R060CFD7XTMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
на замовлення 730 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 441.74 грн |
10+ | 384.01 грн |
25+ | 366.13 грн |
100+ | 298.35 грн |
250+ | 284.94 грн |
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Технічний опис IPDQ65R060CFD7XTMA1 Infineon Technologies
Description: HIGH POWER_NEW, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V, Power Dissipation (Max): 272W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 820µA, Supplier Device Package: PG-HDSOP-22-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V.
Інші пропозиції IPDQ65R060CFD7XTMA1 за ціною від 289.58 грн до 600.24 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IPDQ65R060CFD7XTMA1 | Виробник : Infineon Technologies | MOSFET |
на замовлення 750 шт: термін постачання 220-229 дні (днів) |
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IPDQ65R060CFD7XTMA1 | Виробник : Infineon Technologies | Trans MOSFET N-CH 700V 45A 22-Pin HDSOP EP T/R |
товар відсутній |
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IPDQ65R060CFD7XTMA1 | Виробник : Infineon Technologies |
Description: HIGH POWER_NEW Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 820µA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V |
товар відсутній |