на замовлення 7 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 917.6 грн |
| 10+ | 796.6 грн |
| 25+ | 674.35 грн |
| 50+ | 636.26 грн |
| 100+ | 598.88 грн |
| 250+ | 580.54 грн |
| 500+ | 543.15 грн |
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Технічний опис IPDQ65R029CFD7XTMA1 Infineon Technologies
Description: HIGH POWER_NEW, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V, Power Dissipation (Max): 463W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.79mA, Supplier Device Package: PG-HDSOP-22-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V.
Інші пропозиції IPDQ65R029CFD7XTMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IPDQ65R029CFD7XTMA1 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 700V 85A 22-Pin HDSOP EP T/R |
товар відсутній |
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| IPDQ65R029CFD7XTMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 700V 85A 22-Pin HDSOP EP T/R |
товар відсутній |
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IPDQ65R029CFD7XTMA1 | Виробник : Infineon Technologies |
Description: HIGH POWER_NEW Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V Power Dissipation (Max): 463W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.79mA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V |
товар відсутній |
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IPDQ65R029CFD7XTMA1 | Виробник : Infineon Technologies |
Description: HIGH POWER_NEW Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V Power Dissipation (Max): 463W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.79mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V |
товар відсутній |