на замовлення 35 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 590.88 грн |
| 10+ | 499.7 грн |
| 25+ | 393.61 грн |
| 100+ | 361.16 грн |
| 250+ | 340.7 грн |
| 500+ | 319.54 грн |
| 750+ | 286.39 грн |
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Технічний опис IPDQ60R040S7XTMA1 Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V, Power Dissipation (Max): 272W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 790µA, Supplier Device Package: PG-HDSOP-22-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V.
Інші пропозиції IPDQ60R040S7XTMA1
| Фото | Назва | Виробник | Інформація |
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IPDQ60R040S7XTMA1 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 600V 14A 22-Pin HDSOP EP T/R |
товар відсутній |
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IPDQ60R040S7XTMA1 | Виробник : Infineon Technologies |
Description: HIGH POWER_NEW PG-HDSOP-22 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 790µA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V |
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IPDQ60R040S7XTMA1 | Виробник : Infineon Technologies |
Description: HIGH POWER_NEW PG-HDSOP-22 Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 790µA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V |
товар відсутній |