на замовлення 750 шт:
термін постачання 161-170 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1485.02 грн |
| 10+ | 1289.22 грн |
| 25+ | 1104.89 грн |
| 50+ | 1061.31 грн |
| 100+ | 969.94 грн |
| 250+ | 953.07 грн |
| 500+ | 905.98 грн |
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Технічний опис IPDQ60R015CFD7XTMA1 Infineon Technologies
Description: HIGH POWER_NEW, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 149A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 58.2A, 10V, Power Dissipation (Max): 657W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 2.91mA, Supplier Device Package: PG-HDSOP-22-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V.
Інші пропозиції IPDQ60R015CFD7XTMA1
| Фото | Назва | Виробник | Інформація |
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IPDQ60R015CFD7XTMA1 | Виробник : Infineon Technologies |
 Description: HIGH POWER_NEWPackaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 149A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 58.2A, 10V Power Dissipation (Max): 657W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.91mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V |
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IPDQ60R015CFD7XTMA1 | Виробник : Infineon Technologies |
Description: HIGH POWER_NEW Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 149A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 58.2A, 10V Power Dissipation (Max): 657W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.91mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V |
товар відсутній |