IPDQ60R010S7AXTMA1

IPDQ60R010S7AXTMA1 Infineon Technologies


infineon-ipdq60r010s7a-datasheet-v02_03-en.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH 600V 50A Automotive T/R
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Технічний опис IPDQ60R010S7AXTMA1 Infineon Technologies

Description: AUTOMOTIVE PG-HDSOP-22, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V, Power Dissipation (Max): 694W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 3.08mA, Supplier Device Package: PG-HDSOP-22-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V, Grade: Automotive, Qualification: AEC-Q101.

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IPDQ60R010S7AXTMA1 IPDQ60R010S7AXTMA1 Виробник : Infineon Technologies Infineon-IPDQ60R010S7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627617cd8301762d1f7cd3613e Description: AUTOMOTIVE PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
IPDQ60R010S7AXTMA1 IPDQ60R010S7AXTMA1 Виробник : Infineon Technologies Infineon-IPDQ60R010S7A-DataSheet-v02_00-EN.pdf?fileId=5546d4627617cd8301762d1f7cd3613e Description: AUTOMOTIVE PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
IPDQ60R010S7AXTMA1 IPDQ60R010S7AXTMA1 Виробник : Infineon Technologies Infineon_IPDQ60R010S7A_DataSheet_v02_01_EN-3164626.pdf MOSFET AUTOMOTIVE
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