на замовлення 363 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 791.93 грн |
| 10+ | 705.28 грн |
| 100+ | 508.05 грн |
| 500+ | 442.54 грн |
| 1000+ | 416.06 грн |
| 1700+ | 404.21 грн |
Відгуки про товар
Написати відгук
Технічний опис IPDD60R055CFD7XTMA1 Infineon Technologies
Description: MOSFET N-CH 600V 52A HDSOP-10, Packaging: Tape & Reel (TR), Package / Case: 10-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V, Power Dissipation (Max): 329W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 760µA, Supplier Device Package: PG-HDSOP-10-1, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2724 pF @ 400 V.
Інші пропозиції IPDD60R055CFD7XTMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IPDD60R055CFD7XTMA1 | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 600V 52A HDSOP-10Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V Power Dissipation (Max): 329W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 760µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2724 pF @ 400 V |
товар відсутній |
|
|
|
IPDD60R055CFD7XTMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 600V 52A HDSOP-10 Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V Power Dissipation (Max): 329W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 760µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2724 pF @ 400 V |
товар відсутній |