IPD85P04P407ATMA1

IPD85P04P407ATMA1 Infineon Technologies


Infineon-IPD85P04P4_07-DS-v01_00-en-1731809.pdf Виробник: Infineon Technologies
MOSFET P-Ch -40V -85A OptiMOS-P2
на замовлення 10396 шт:

термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+181.87 грн
10+ 160.62 грн
100+ 112.16 грн
500+ 92.41 грн
Мінімальне замовлення: 2
Відгуки про товар
Написати відгук

Технічний опис IPD85P04P407ATMA1 Infineon Technologies

Description: MOSFET P-CH 40V 85A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), Rds On (Max) @ Id, Vgs: 7.3mOhm @ 85A, 10V, Power Dissipation (Max): 88W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: PG-TO252-3-313, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Інші пропозиції IPD85P04P407ATMA1

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
IPD85P04P407ATMA1 IPD85P04P407ATMA1 Виробник : Infineon Technologies Infineon-IPD85P04P4_07-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f782666e92ddd Description: MOSFET P-CH 40V 85A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 85A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
IPD85P04P407ATMA1 IPD85P04P407ATMA1 Виробник : Infineon Technologies Infineon-IPD85P04P4_07-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f782666e92ddd Description: MOSFET P-CH 40V 85A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 85A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній