Технічний опис IPD70N12S3L12ATMA1 Infineon Technologies
Description: MOSFET N-CHANNEL_100+, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 83µA, Supplier Device Package: PG-TO252-3-11, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції IPD70N12S3L12ATMA1
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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IPD70N12S3L12ATMA1 | Виробник : Infineon Technologies |
 OptiMOS -T Power-Transistor |
товар відсутній |
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IPD70N12S3L12ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CHANNEL_100+ Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 83µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |