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IPD65R600E6BTMA1 Infineon Technologies
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Description: MOSFET N-CH 650V 7.3A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
456+ | 45.94 грн |
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Технічний опис IPD65R600E6BTMA1 Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 210µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V.
Інші пропозиції IPD65R600E6BTMA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IPD65R600E6BTMA1 | Виробник : Infineon Technologies |
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товар відсутній |
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![]() |
IPD65R600E6BTMA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3 Type of transistor: N-MOSFET Mounting: SMD Case: PG-TO252-3 On-state resistance: 0.6Ω Power dissipation: 63W Technology: CoolMOS™ Polarisation: unipolar Drain current: 7.3A Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V кількість в упаковці: 1 шт |
товар відсутній |
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![]() |
IPD65R600E6BTMA1 | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 210µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V |
товар відсутній |
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![]() |
IPD65R600E6BTMA1 | Виробник : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 210µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V |
товар відсутній |
|
![]() |
IPD65R600E6BTMA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3 Type of transistor: N-MOSFET Mounting: SMD Case: PG-TO252-3 On-state resistance: 0.6Ω Power dissipation: 63W Technology: CoolMOS™ Polarisation: unipolar Drain current: 7.3A Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V |
товар відсутній |