IPD65R420CFDATMA2 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO252-3-341
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 140.22 грн |
| 10+ | 112.16 грн |
| 100+ | 89.25 грн |
| 500+ | 70.87 грн |
| 1000+ | 60.13 грн |
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Технічний опис IPD65R420CFDATMA2 Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V, Power Dissipation (Max): 83.3W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 300µA, Supplier Device Package: PG-TO252-3-341, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V.
Інші пропозиції IPD65R420CFDATMA2
| Фото | Назва | Виробник | Інформація |
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IPD65R420CFDATMA2 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 650V 8.7A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Power Dissipation (Max): 83.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 300µA Supplier Device Package: PG-TO252-3-341 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V |
товар відсутній |
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IPD65R420CFDATMA2 | Виробник : Infineon Technologies |
MOSFET LOW POWER_LEGACY |
товар відсутній |