на замовлення 500 шт:
термін постачання 140-149 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 78.1 грн |
| 10+ | 63.27 грн |
| 100+ | 42.82 грн |
| 500+ | 36.26 грн |
| 1000+ | 29.56 грн |
| 2500+ | 27.79 грн |
| 5000+ | 26.52 грн |
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Технічний опис IPD60R600CM8XTMA1 Infineon Technologies
Description: IPD60R600CM8XTMA1, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tj), Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V, Power Dissipation (Max): 64W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 40µA, Supplier Device Package: PG-TO252-3-313, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V.
Інші пропозиції IPD60R600CM8XTMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IPD60R600CM8XTMA1 | Виробник : Infineon Technologies |
 MOSFET Power Transistor |
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IPD60R600CM8XTMA1 | Виробник : Infineon Technologies |
Description: IPD60R600CM8XTMA1 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tj) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 64W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 40µA Supplier Device Package: PG-TO252-3-313 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V |
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IPD60R600CM8XTMA1 | Виробник : Infineon Technologies |
Description: IPD60R600CM8XTMA1 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tj) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 64W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 40µA Supplier Device Package: PG-TO252-3-313 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V |
товар відсутній |