IPD50R950CEBTMA1 Infineon Technologies
на замовлення 866 шт:
термін постачання 21-30 дні (днів)
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Технічний опис IPD50R950CEBTMA1 Infineon Technologies
Description: MOSFET N-CH 500V 4.3A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 100µA, Supplier Device Package: PG-TO252-3-11, Drive Voltage (Max Rds On, Min Rds On): 13V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V.
Інші пропозиції IPD50R950CEBTMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IPD50R950CEBTMA1 | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 500V 4.3A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-TO252-3-11 Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V |
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