IPD50R380CEBTMA1

IPD50R380CEBTMA1 Infineon Technologies


Infineon-IPD50R380CE-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed0a2ef580f38 Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 14.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO252-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис IPD50R380CEBTMA1 Infineon Technologies

Description: MOSFET N-CH 500V 14.1A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V, Power Dissipation (Max): 73W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 260µA, Supplier Device Package: PG-TO252-3, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 13V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V.

Інші пропозиції IPD50R380CEBTMA1

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
IPD50R380CEBTMA1 IPD50R380CEBTMA1 Виробник : Infineon Technologies Infineon-IPD50R380CE-DS-v02_03-EN-522957.pdf MOSFET N-Ch 500V 9.9A DPAK-2
товар відсутній