Технічний опис IPD082N10N3GBTMA1 Infineon Technologies
Description: MOSFET N-CH 100V 80A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 8.2mOhm @ 73A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 75µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V.
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Фото | Назва | Виробник | Інформація |
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IPD082N10N3GBTMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 100V 80A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 73A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 75µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V |
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IPD082N10N3GBTMA1 | Виробник : Infineon Technologies | MOSFET N-Ch 100V 80A DPAK-2 OptiMOS 3 |
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