IPB80N08S2L07ATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 75V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
на замовлення 442 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 335.29 грн |
| 10+ | 270.89 грн |
| 100+ | 219.19 грн |
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Технічний опис IPB80N08S2L07ATMA1 Infineon Technologies
Description: MOSFET N-CH 75V 80A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V.
Інші пропозиції IPB80N08S2L07ATMA1 за ціною від 158.85 грн до 358.34 грн
| Фото | Назва | Виробник | Інформація |
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IPB80N08S2L07ATMA1 | Виробник : Infineon Technologies |
MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS |
на замовлення 707 шт: термін постачання 21-30 дні (днів) |
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IPB80N08S2L07ATMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 75V 80A Automotive 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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IPB80N08S2L07ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Gate charge: 183nC Kind of channel: enhanced кількість в упаковці: 1000 шт |
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IPB80N08S2L07ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 75V 80A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V |
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IPB80N08S2L07ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Gate charge: 183nC Kind of channel: enhanced |
товар відсутній |