IPB65R099CFD7AATMA1 Infineon Technologies
на замовлення 1367 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 406.54 грн |
| 10+ | 337.46 грн |
| 25+ | 276.51 грн |
| 100+ | 237.01 грн |
| 250+ | 223.61 грн |
| 500+ | 220.08 грн |
| 1000+ | 186.93 грн |
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Технічний опис IPB65R099CFD7AATMA1 Infineon Technologies
Description: MOSFET N-CH 650V 24A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V, Power Dissipation (Max): 127W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 630µA, Supplier Device Package: PG-TO263-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V, Qualification: AEC-Q101.
Інші пропозиції IPB65R099CFD7AATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IPB65R099CFD7AATMA1 | Виробник : Infineon Technologies |
 N-Channel MOSFET Transistor |
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IPB65R099CFD7AATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 650V 24A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V Power Dissipation (Max): 127W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 630µA Supplier Device Package: PG-TO263-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V Qualification: AEC-Q101 |
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IPB65R099CFD7AATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 650V 24A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V Power Dissipation (Max): 127W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 630µA Supplier Device Package: PG-TO263-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V Qualification: AEC-Q101 |
товар відсутній |