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IPB60R199CPAATMA1 Infineon Technologies
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Trans MOSFET N-CH 600V 16A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
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Технічний опис IPB60R199CPAATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 16A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V, Power Dissipation (Max): 139W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.1mA, Supplier Device Package: PG-TO263-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V, Grade: Automotive, Qualification: AEC-Q101.
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IPB60R199CPAATMA1 | Виробник : Infineon Technologies |
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товар відсутній |
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IPB60R199CPAATMA1 | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.1mA Supplier Device Package: PG-TO263-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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IPB60R199CPAATMA1 | Виробник : Infineon Technologies |
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товар відсутній |