IPB47N10SL-26

IPB47N10SL-26 Infineon Technologies


INFNS09768-1.pdf?t.download=true&u=5oefqw Виробник: Infineon Technologies
Description: IPB47N10 - 75V-100V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 33A, 10V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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Технічний опис IPB47N10SL-26 Infineon Technologies

Description: IPB47N10 - 75V-100V N-CHANNEL AU, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 33A, 10V, Power Dissipation (Max): 175W (Tc), Vgs(th) (Max) @ Id: 2V @ 2mA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V.

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IPB47N10SL-26 IPB47N10SL-26 Виробник : Infineon Technologies Infineon-IPP_B_I47N10SL_26-DS-v01_01-en-785422.pdf MOSFET N-Ch 100V 47A D2PAK-2 SIPMOS
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