Технічний опис IPB45N04S4L08ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 45A TO263-3-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 7.6mOhm @ 45A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 17µA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V.
Інші пропозиції IPB45N04S4L08ATMA1
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IPB45N04S4L08ATMA1 | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 40V 45A TO263-3-2Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 45A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 17µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V |
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