IPB240N04S4R9ATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 40V 240A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Qualification: AEC-Q101
на замовлення 973 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 383.09 грн |
| 10+ | 309.83 грн |
| 100+ | 250.63 грн |
| 500+ | 209.08 грн |
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Технічний опис IPB240N04S4R9ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 240A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), Rds On (Max) @ Id, Vgs: 0.87mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 230µA, Supplier Device Package: PG-TO263-7-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції IPB240N04S4R9ATMA1
| Фото | Назва | Виробник | Інформація |
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IPB240N04S4R9ATMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 40V 240A Automotive 7-Pin(6+Tab) D2PAK T/R |
товару немає в наявності |
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IPB240N04S4R9ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 40V 240A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 0.87mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 230µA Supplier Device Package: PG-TO263-7-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
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IPB240N04S4R9ATMA1 | Виробник : Infineon Technologies |
MOSFETs N |
товару немає в наявності |