IPB13N03LBG

IPB13N03LBG Infineon Technologies


Виробник: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
на замовлення 999 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
999+26.48 грн
Мінімальне замовлення: 999
Відгуки про товар
Написати відгук

Технічний опис IPB13N03LBG Infineon Technologies

Description: MOSFET N-CH 30V 30A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 12.5mOhm @ 30A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 2V @ 20µA, Supplier Device Package: PG-TO263-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1355 pF @ 15 V.

Інші пропозиції IPB13N03LBG

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
IPB13N03LB G IPB13N03LB G Виробник : Infineon Technologies IPB13N03LB_Rev0.93_G.pdf Description: MOSFET N-CH 30V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1355 pF @ 15 V
товар відсутній
IPB13N03LB G IPB13N03LB G Виробник : Infineon Technologies IPB13N03LB_Rev0.93_G.pdf Description: MOSFET N-CH 30V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1355 pF @ 15 V
товар відсутній