![IPB120N04S4L02ATMA1 IPB120N04S4L02ATMA1](https://www.mouser.com/images/mouserelectronics/lrg/TO_263_3_new_SPL.jpg)
на замовлення 2100 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 232.06 грн |
10+ | 191.56 грн |
25+ | 165.17 грн |
100+ | 125.81 грн |
500+ | 104.02 грн |
1000+ | 96.29 грн |
Відгуки про товар
Написати відгук
Технічний опис IPB120N04S4L02ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V, Power Dissipation (Max): 158W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 110µA, Supplier Device Package: PG-TO263-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції IPB120N04S4L02ATMA1 за ціною від 100.04 грн до 291.2 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IPB120N04S4L02ATMA1 | Виробник : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 110µA Supplier Device Package: PG-TO263-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 909 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
![]() |
IPB120N04S4L02ATMA1 | Виробник : Infineon Technologies |
![]() |
товар відсутній |
|||||||||||
![]() |
IPB120N04S4L02ATMA1 | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 110µA Supplier Device Package: PG-TO263-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |