IPB120N03S4L03ATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 30V 120A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 286+ | 74.71 грн |
Відгуки про товар
Написати відгук
Технічний опис IPB120N03S4L03ATMA1 Infineon Technologies
Description: MOSFET N-CH 30V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 40µA, Supplier Device Package: PG-TO263-3, Grade: Automotive, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції IPB120N03S4L03ATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IPB120N03S4L03ATMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 30V 120A Automotive 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
|
|
|
IPB120N03S4L03ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 30V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 40µA Supplier Device Package: PG-TO263-3 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |
|
 |
IPB120N03S4L03ATMA1 | Виробник : Infineon Technologies |
MOSFET MOSFET_(20V 40V) |
товар відсутній |