IPB100N06S3L-04 Infineon Technologies

Description: MOSFET N-CH 55V 100A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V, Power Dissipation (Max): 214W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 150µA, Supplier Device Package: PG-TO263-3-2, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 362 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 17270 pF @ 25 V.