![IPA65R660CFDXKSA2 IPA65R660CFDXKSA2](https://media.digikey.com/Photos/Infineon%20Photos/MOSFETTO247.jpg)
IPA65R660CFDXKSA2 Infineon Technologies
![Infineon-IPA65R660CFD-DataSheet-v02_07-EN.pdf?fileId=5546d462727878c201727e85f6c15b38](/images/adobe-acrobat.png)
Description: MOSFET N-CH 700V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис IPA65R660CFDXKSA2 Infineon Technologies
Description: MOSFET N-CH 700V 6A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V, Power Dissipation (Max): 27.8W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 200µA, Supplier Device Package: PG-TO220 Full Pack, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V.
Інші пропозиції IPA65R660CFDXKSA2
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
IPA65R660CFDXKSA2 | Виробник : Infineon Technologies |
![]() |
товар відсутній |