Технічний опис IPA65R099C6XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 38A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.2mA, Supplier Device Package: PG-TO220-3-111, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V.
Інші пропозиції IPA65R099C6XKSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IPA65R099C6XKSA1 | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 650V 38A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Supplier Device Package: PG-TO220-3-111 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V |
товар відсутній |
|
 |
IPA65R099C6XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 35W; TO220FP Mounting: THT Kind of package: tube Case: TO220FP Polarisation: unipolar Kind of channel: enhanced Technology: CoolMOS™ Power dissipation: 35W Gate-source voltage: ±20V Drain-source voltage: 650V Type of transistor: N-MOSFET Drain current: 38A On-state resistance: 99mΩ |
товар відсутній |