IPA50R950CE Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 4.3A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 25.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO220-3-31
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Description: MOSFET N-CH 500V 4.3A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 25.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO220-3-31
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
на замовлення 1309 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
771+ | 30.57 грн |
Відгуки про товар
Написати відгук
Технічний опис IPA50R950CE Infineon Technologies
Description: MOSFET N-CH 500V 4.3A TO220-FP, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V, Power Dissipation (Max): 25.7W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 100µA, Supplier Device Package: PG-TO220-3-31, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 13V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V.
Інші пропозиції IPA50R950CE
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
IPA50R950CE | Виробник : Infineon Technologies |
Description: MOSFET N-CH 500V 4.3A TO220-FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V Power Dissipation (Max): 25.7W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-TO220-3-31 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V |
товар відсутній |
||
IPA50R950CE | Виробник : Infineon Technologies | MOSFET N-Ch 500V 4.3A TO220FP-3 CoolMOS CE |
товар відсутній |