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IPA50R399CPXKSA1 INFINEON TECHNOLOGIES
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Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; 8.3W; TO220FP
Kind of package: tube
Drain-source voltage: 500V
Drain current: 3.3A
On-state resistance: 0.399Ω
Type of transistor: N-MOSFET
Power dissipation: 8.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
кількість в упаковці: 1 шт
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Технічний опис IPA50R399CPXKSA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 500V 9A TO220-FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 330µA, Supplier Device Package: PG-TO220-3-31, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V.
Інші пропозиції IPA50R399CPXKSA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IPA50R399CPXKSA1 | Виробник : Infineon Technologies |
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товар відсутній |
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IPA50R399CPXKSA1 | Виробник : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 330µA Supplier Device Package: PG-TO220-3-31 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V |
товар відсутній |
|
![]() |
IPA50R399CPXKSA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; 8.3W; TO220FP Kind of package: tube Drain-source voltage: 500V Drain current: 3.3A On-state resistance: 0.399Ω Type of transistor: N-MOSFET Power dissipation: 8.3W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO220FP |
товар відсутній |