IKP30N65F5XKSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IGBT TRENCH 650V 55A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/170ns
Switching Energy: 280µJ (on), 70µJ (off)
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
на замовлення 494 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 228.09 грн |
| 10+ | 184.35 грн |
| 100+ | 149.17 грн |
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Технічний опис IKP30N65F5XKSA1 Infineon Technologies
Description: IGBT TRENCH 650V 55A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 55 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Supplier Device Package: PG-TO220-3, IGBT Type: Trench, Td (on/off) @ 25°C: 19ns/170ns, Switching Energy: 280µJ (on), 70µJ (off), Test Condition: 400V, 15A, 23Ohm, 15V, Gate Charge: 65 nC, Part Status: Active, Current - Collector (Ic) (Max): 55 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 188 W.
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IKP30N65F5XKSA1 | Виробник : Infineon Technologies |
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IKP30N65F5XKSA1 | Виробник : Infineon Technologies |
Trans IGBT Chip N-CH 650V 55A 188W 3-Pin(3+Tab) TO-220 Tube |
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Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 35A; 93W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 35A Power dissipation: 93W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 22ns Turn-off time: 189ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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IGBT Transistors INDUSTRY 14 |
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IKP30N65F5XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 35A; 93W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 35A Power dissipation: 93W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 22ns Turn-off time: 189ns Features of semiconductor devices: integrated anti-parallel diode |
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