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IDH09SG60CXKSA2 Infineon Technologies
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Description: DIODE SIL CARB 600V 9A TO220-2-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
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Технічний опис IDH09SG60CXKSA2 Infineon Technologies
Description: DIODE SIL CARB 600V 9A TO220-2-1, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 280pF @ 1V, 1MHz, Current - Average Rectified (Io): 9A, Supplier Device Package: PG-TO220-2-1, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A, Current - Reverse Leakage @ Vr: 80 µA @ 600 V.
Інші пропозиції IDH09SG60CXKSA2
Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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IDH09SG60CXKSA2 | Виробник : Infineon Technologies |
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