![HS1GF-T HS1GF-T](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4183/MFG_ThinSMA.jpg)
HS1GF-T Taiwan Semiconductor Corporation
![HS1DF-T SERIES_B2103.pdf](/images/adobe-acrobat.png)
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 7495 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
13+ | 24.12 грн |
18+ | 16.19 грн |
100+ | 7.92 грн |
500+ | 6.2 грн |
1000+ | 4.31 грн |
2000+ | 3.73 грн |
Відгуки про товар
Написати відгук
Технічний опис HS1GF-T Taiwan Semiconductor Corporation
Description: 50NS, 1A, 400V, HIGH EFFICIENT R, Packaging: Tape & Reel (TR), Package / Case: DO-221AC, SMA Flat Leads, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 11pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SMAF, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 400 V.
Інші пропозиції HS1GF-T
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
HS1GF-T | Виробник : Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 11pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товар відсутній |
|
![]() |
HS1GF-T | Виробник : Taiwan Semiconductor |
![]() |
товар відсутній |