HGT1S7N60C3DS9A Harris Corporation
Виробник: Harris Corporation
Description: 14A, 600V, UFS N-CHANNEL IGBT W/
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-263AB
Switching Energy: 165µJ (on), 600µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 23 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
Description: 14A, 600V, UFS N-CHANNEL IGBT W/
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Supplier Device Package: TO-263AB
Switching Energy: 165µJ (on), 600µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 23 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
на замовлення 25600 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
133+ | 157.98 грн |
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Технічний опис HGT1S7N60C3DS9A Harris Corporation
Description: 14A, 600V, UFS N-CHANNEL IGBT W/, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Input Type: Standard, Reverse Recovery Time (trr): 37 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A, Supplier Device Package: TO-263AB, Switching Energy: 165µJ (on), 600µJ (off), Test Condition: 480V, 7A, 50Ohm, 15V, Gate Charge: 23 nC, Part Status: Active, Current - Collector (Ic) (Max): 14 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 56 A, Power - Max: 60 W.
Інші пропозиції HGT1S7N60C3DS9A
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
HGT1S7N60C3DS9A | Виробник : FAIRCHILD |
на замовлення 1900 шт: термін постачання 14-28 дні (днів) |
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HGT1S7N60C3DS9A | Виробник : ON Semiconductor | Trans IGBT Chip N-CH 600V 14A 60000mW 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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HGT1S7N60C3DS9A | Виробник : onsemi |
Description: IGBT 600V 14A 60W TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A Supplier Device Package: TO-263 (D2Pak) Switching Energy: 165µJ (on), 600µJ (off) Test Condition: 480V, 7A, 50Ohm, 15V Gate Charge: 23 nC Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 60 W |
товар відсутній |
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HGT1S7N60C3DS9A | Виробник : onsemi / Fairchild | IGBT Transistors 14a 600V N-Ch IGBT UFS Series |
товар відсутній |