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HFGM200D12V3 HUAJING
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: PT
Topology: IGBT half-bridge
Case: V3 62MM
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 200A
Pulsed collector current: 400A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: PT
Topology: IGBT half-bridge
Case: V3 62MM
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 200A
Pulsed collector current: 400A
кількість в упаковці: 1 шт
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Технічний опис HFGM200D12V3 HUAJING
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Application: for UPS; Inverter, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: IGBT, Technology: PT, Topology: IGBT half-bridge, Case: V3 62MM, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±30V, Collector current: 200A, Pulsed collector current: 400A, кількість в упаковці: 1 шт.
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HFGM200D12V3 | Виробник : HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: PT Topology: IGBT half-bridge Case: V3 62MM Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±30V Collector current: 200A Pulsed collector current: 400A |
товар відсутній |