GS-065-011-6-LR-TR

GS-065-011-6-LR-TR Infineon Technologies Canada Inc.


Виробник: Infineon Technologies Canada Inc.
Description: GS-065-011-6-LR-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
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Технічний опис GS-065-011-6-LR-TR Infineon Technologies Canada Inc.

Description: GS-065-011-6-LR-TR, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 2.4mA, Supplier Device Package: 8-PDFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V.

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GS-065-011-6-LR-TR Виробник : GaN Systems Infineon_GS_065_011_6_LR_TR_DataSheet_v01_00_EN-3440091.pdf MOSFETs
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