Технічний опис GP1S092HCPI SHARP
Description: SENSOR OPT SLOT PHOTOTRANS 4SMD, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, Sensing Distance: 0.079" (2mm), Sensing Method: Through-Beam, Mounting Type: Surface Mount, Operating Temperature: -25°C ~ 85°C, Output Configuration: Phototransistor, Response Time: 50µs, 50µs, Current - Collector (Ic) (Max): 20 mA, Voltage - Collector Emitter Breakdown (Max): 35 V, Current - DC Forward (If) (Max): 50 mA.
Інші пропозиції GP1S092HCPI
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| GP1S092HCPI | Виробник : SHARP |
 07+NOP |
на замовлення 370 шт: термін постачання 14-28 дні (днів) |
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GP1S092HCPI | Виробник : Sharp Microelectronics |
Description: SENSOR OPT SLOT PHOTOTRANS 4SMD Packaging: Cut Tape (CT) Package / Case: 4-SMD Sensing Distance: 0.079" (2mm) Sensing Method: Through-Beam Mounting Type: Surface Mount Operating Temperature: -25°C ~ 85°C Output Configuration: Phototransistor Response Time: 50µs, 50µs Current - Collector (Ic) (Max): 20 mA Voltage - Collector Emitter Breakdown (Max): 35 V Current - DC Forward (If) (Max): 50 mA |
товар відсутній |
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GP1S092HCPI | Виробник : Sharp Microelectronics |
Description: SENSOR OPT SLOT PHOTOTRANS 4SMD Packaging: Tape & Reel (TR) Package / Case: 4-SMD Sensing Distance: 0.079" (2mm) Sensing Method: Through-Beam Mounting Type: Surface Mount Operating Temperature: -25°C ~ 85°C Output Configuration: Phototransistor Response Time: 50µs, 50µs Current - Collector (Ic) (Max): 20 mA Voltage - Collector Emitter Breakdown (Max): 35 V Current - DC Forward (If) (Max): 50 mA |
товар відсутній |