Технічний опис GL41MHE3/96 Vishay
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 1kV; 1A; DO213AB; Ufmax: 1.2V; Ifsm: 30A, Type of diode: rectifying, Max. off-state voltage: 1kV, Max. forward impulse current: 30A, Semiconductor structure: single diode, Case: DO213AB, Mounting: SMD, Leakage current: 50µA, Kind of package: reel; tape, Features of semiconductor devices: glass passivated, Capacitance: 8pF, Load current: 1A, Max. forward voltage: 1.2V, кількість в упаковці: 1 шт.
Інші пропозиції GL41MHE3/96
| Фото | Назва | Виробник | Інформація |
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| GL41MHE3/96 | Виробник : VISHAY |
 Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; DO213AB; Ufmax: 1.2V; Ifsm: 30A Type of diode: rectifying Max. off-state voltage: 1kV Max. forward impulse current: 30A Semiconductor structure: single diode Case: DO213AB Mounting: SMD Leakage current: 50µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Capacitance: 8pF Load current: 1A Max. forward voltage: 1.2V кількість в упаковці: 1 шт |
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GL41MHE3/96 | Виробник : Vishay Semiconductor Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO213AB |
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GL41MHE3/96 | Виробник : Vishay General Semiconductor |
Rectifiers 1 Amp 1000 Volt 30 Amp IFSM |
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| GL41MHE3/96 | Виробник : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; DO213AB; Ufmax: 1.2V; Ifsm: 30A Type of diode: rectifying Max. off-state voltage: 1kV Max. forward impulse current: 30A Semiconductor structure: single diode Case: DO213AB Mounting: SMD Leakage current: 50µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Capacitance: 8pF Load current: 1A Max. forward voltage: 1.2V |
товар відсутній |