GD25WD40CKIGR GigaDevice Semiconductor (HK) Limited
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Description: IC FLASH 4MBIT SPI/DUAL 8USON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 8-USON (1.5x1.5)
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 100 MHz
Memory Format: FLASH
Write Cycle Time - Word, Page: 97µs, 6ms
Memory Interface: SPI - Dual I/O
Access Time: 12 ns
Memory Organization: 512K x 8
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Технічний опис GD25WD40CKIGR GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 4MBIT SPI/DUAL 8USON, Packaging: Tape & Reel (TR), Package / Case: 8-XFDFN Exposed Pad, Mounting Type: Surface Mount, Supplier Device Package: 8-USON (1.5x1.5), Memory Size: 4Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 3.6V, Technology: FLASH - NOR (SLC), Clock Frequency: 100 MHz, Memory Format: FLASH, Write Cycle Time - Word, Page: 97µs, 6ms, Memory Interface: SPI - Dual I/O, Access Time: 12 ns, Memory Organization: 512K x 8.
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GD25WD40CKIGR | Виробник : GigaDevice |
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