GD25WB256EYJGR GigaDevice Semiconductor (HK) Limited
Виробник: GigaDevice Semiconductor (HK) LimitedDescription: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 300µs, 8ms
Memory Interface: SPI - Quad I/O
Access Time: 7.5 ns
Memory Organization: 32M x 8
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Технічний опис GD25WB256EYJGR GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 256MBIT SPI/QUAD 8WSON, Packaging: Tape & Reel (TR), Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 256Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 105°C (TA), Voltage - Supply: 1.65V ~ 3.6V, Technology: FLASH - NOR (SLC), Clock Frequency: 104 MHz, Memory Format: FLASH, Supplier Device Package: 8-WSON (6x8), Write Cycle Time - Word, Page: 300µs, 8ms, Memory Interface: SPI - Quad I/O, Access Time: 7.5 ns, Memory Organization: 32M x 8.
Інші пропозиції GD25WB256EYJGR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| GD25WB256EYJGR | Виробник : GigaDevice |
NOR Flash |
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