GCMX040A120B2H1P SemiQ
Виробник: SemiQDescription: SIC 1200V 40M MOSFET FULL-BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 217W (Tc)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 800V
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 121nC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4V @ 10mA
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Технічний опис GCMX040A120B2H1P SemiQ
Description: SIC 1200V 40M MOSFET FULL-BRIDGE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 217W (Tc), Drain to Source Voltage (Vdss): 1200V, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 800V, Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V, Gate Charge (Qg) (Max) @ Vgs: 121nC @ 20V, FET Feature: Silicon Carbide (SiC), Vgs(th) (Max) @ Id: 4V @ 10mA.
Інші пропозиції GCMX040A120B2H1P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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GCMX040A120B2H1P | Виробник : SemiQ |
Discrete Semiconductor Modules SiC 1200V 40mohm MOSFET Full-Bridge Module |
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