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GBU1006-K Taiwan Semiconductor Corporation
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Description: 10A, 800V, STANDARD BRIDGE RECTI
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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Технічний опис GBU1006-K Taiwan Semiconductor Corporation
Description: 10A, 800V, STANDARD BRIDGE RECTI, Packaging: Tube, Package / Case: 4-ESIP, GBU, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GBU, Voltage - Peak Reverse (Max): 800 V, Current - Average Rectified (Io): 10 A, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A, Current - Reverse Leakage @ Vr: 5 µA @ 800 V.
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Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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GBU1006-K | Виробник : Taiwan Semiconductor |
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