GBL08-M3/51 Vishay General Semiconductor - Diodes Division
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Description: BRIDGE RECT 1PHASE 800V 4A GBL
Packaging: Tray
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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Технічний опис GBL08-M3/51 Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 4A GBL, Packaging: Tray, Package / Case: 4-SIP, GBL, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GBL, Part Status: Active, Voltage - Peak Reverse (Max): 800 V, Current - Average Rectified (Io): 4 A, Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A, Current - Reverse Leakage @ Vr: 10 µA @ 800 V.
Інші пропозиції GBL08-M3/51
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
GBL08-M3/51 | Виробник : Vishay General Semiconductor |
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