Технічний опис GBJ20M GeneSiC Semiconductor
Category: Flat single phase diode bridge rectif., Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 260A, Type of bridge rectifier: single-phase, Max. off-state voltage: 1kV, Load current: 20A, Max. forward impulse current: 260A, Electrical mounting: THT, Version: flat, Max. forward voltage: 1.1V, Leads: flat pin, Case: GBJ4-10, Kind of package: tube, Features of semiconductor devices: glass passivated, кількість в упаковці: 1 шт.
Інші пропозиції GBJ20M
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GBJ20M | Виробник : DC COMPONENTS |
 Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 260A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 20A Max. forward impulse current: 260A Electrical mounting: THT Version: flat Max. forward voltage: 1.1V Leads: flat pin Case: GBJ4-10 Kind of package: tube Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
товар відсутній |
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GBJ20M | Виробник : DC COMPONENTS |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 260A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 20A Max. forward impulse current: 260A Electrical mounting: THT Version: flat Max. forward voltage: 1.1V Leads: flat pin Case: GBJ4-10 Kind of package: tube Features of semiconductor devices: glass passivated |
товар відсутній |