Технічний опис GB10SLT12-252 GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 10A TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 520pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-252, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A, Current - Reverse Leakage @ Vr: 250 µA @ 1200 V.
Інші пропозиції GB10SLT12-252
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GB10SLT12-252 | Виробник : GeneSiC Semiconductor |
![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 520pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
товар відсутній |
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GB10SLT12-252 | Виробник : GeneSiC Semiconductor |
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товар відсутній |