GAN190-650FBEZ NEXPERIA
Виробник: NEXPERIA
Description: NEXPERIA - GAN190-650FBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 11.5 A, 0.138 ohm, 2.8 nC, DFN5060, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 11.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 2.8nC
Bauform - Transistor: DFN5060
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.138ohm
SVHC: No SVHC (23-Jan-2024)
Description: NEXPERIA - GAN190-650FBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 11.5 A, 0.138 ohm, 2.8 nC, DFN5060, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 11.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 2.8nC
Bauform - Transistor: DFN5060
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.138ohm
SVHC: No SVHC (23-Jan-2024)
на замовлення 2372 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
100+ | 206.39 грн |
500+ | 188.02 грн |
1000+ | 170.21 грн |
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Технічний опис GAN190-650FBEZ NEXPERIA
Description: 650 V, 190 MOHM GALLIUM NITRIDE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 12.2mA, Supplier Device Package: DFN5060-5, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -1.4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V.
Інші пропозиції GAN190-650FBEZ за ціною від 136.47 грн до 292.5 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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GAN190-650FBEZ | Виробник : NEXPERIA |
Description: NEXPERIA - GAN190-650FBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 11.5 A, 0.138 ohm, 2.8 nC, DFN5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 11.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 2.8nC Bauform - Transistor: DFN5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.138ohm SVHC: No SVHC (23-Jan-2024) |
на замовлення 2372 шт: термін постачання 21-31 дні (днів) |
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GAN190-650FBEZ | Виробник : Nexperia | GaN FETs MOS DISCRETES |
на замовлення 1700 шт: термін постачання 21-30 дні (днів) |
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GAN190-650FBEZ | Виробник : Nexperia USA Inc. |
Description: 650 V, 190 MOHM GALLIUM NITRIDE Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 12.2mA Supplier Device Package: DFN5060-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V |
на замовлення 1908 шт: термін постачання 21-31 дні (днів) |
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GAN190-650FBEZ | Виробник : NEXPERIA | 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN5 mm x 6 mm package / SOT8075 |
товар відсутній |
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GAN190-650FBEZ | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11.5A Pulsed drain current: 20.5A Power dissipation: 125W Case: DFN5060-5 Gate-source voltage: -1.4...7V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 2.8nC Kind of package: tape Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 2500 шт |
товар відсутній |
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GAN190-650FBEZ | Виробник : Nexperia USA Inc. |
Description: 650 V, 190 MOHM GALLIUM NITRIDE Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 12.2mA Supplier Device Package: DFN5060-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V |
товар відсутній |
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GAN190-650FBEZ | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11.5A Pulsed drain current: 20.5A Power dissipation: 125W Case: DFN5060-5 Gate-source voltage: -1.4...7V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 2.8nC Kind of package: tape Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
товар відсутній |