GA35XCP12-247 GeneSiC Semiconductor

Description: IGBT 1200V SOT247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 36 ns, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 35A, Supplier Device Package: TO-247AB, IGBT Type: PT, Switching Energy: 2.66mJ (on), 4.35mJ (off), Test Condition: 800V, 35A, 22Ohm, 15V, Gate Charge: 50 nC, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 35 A.